US 12,265,286 B2
Broadband electro-absorption optical modulator using on-chip RF input signal termination
Andrei Kaikkonen, Jarfalla (SE); David Adams, Stockholm (SE); Robert Lewen, Tyreso (SE); and Nicolae Chitica, Kista (SE)
Assigned to II-VI Delaware, Inc., Wilmington, DE (US)
Filed by II-VI Delaware, Inc., Wilmington, DE (US)
Filed on Feb. 6, 2024, as Appl. No. 18/434,059.
Application 18/434,059 is a continuation of application No. 17/019,706, filed on Sep. 14, 2020, granted, now 11,927,839.
Prior Publication US 2024/0176172 A1, May 30, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/06 (2006.01); G02F 1/025 (2006.01); G02F 1/015 (2006.01)
CPC G02F 1/025 (2013.01) [H01S 5/0601 (2013.01); G02F 1/0157 (2021.01); G02F 2202/101 (2013.01); G02F 2202/102 (2013.01); G02F 2202/108 (2013.01)] 8 Claims
OG exemplary drawing
 
1. An electro-absorption optical modulator, comprising:
a substrate;
an electro-absorption modulating (EAM) device formed on the substrate, the EAM device having an optical input for receiving a continuous wave (CW) optical signal, an optical output for emitting a modulated optical output signal;
an RF input signal path coupled to the EAM device for providing a modulated electrical input signal to the EAM device;
an on-chip AC ground plane disposed on the substrate; and
a resistive RF signal termination path coupled between the on-chip AC ground plane and the RF input signal path, the on-chip AC ground plane terminating a high frequency portion of the modulated electrical input signal.