	US 12,265,262 B2
	Source/drain feature separation structure
Shih-Wei Lin, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,121.
Application 18/362,121 is a division of application No. 17/213,960, filed on Mar. 26, 2021, granted, now 11,740,412.
Claims priority of provisional application 62/705,464, filed on Jun. 29, 2020.
Prior Publication US 2023/0375785 A1, Nov. 23, 2023
Int. Cl. G02B 6/30 (2006.01); G02B 6/122 (2006.01); G02B 6/136 (2006.01)

CPC G02B 6/305 (2013.01) [G02B 6/1228 (2013.01); G02B 6/136 (2013.01)]

20 Claims

1. A method of fabricating a structure, comprising:

forming a waveguide having a core layer and a cladding layer over a substrate;

forming a masking element over the substrate, wherein the masking element has a first opening defining a cavity and a plurality of second openings defining a plurality of release holes;

etching the cladding layer under the first opening and the plurality of second openings to concurrently form the plurality of release holes and an upper portion of the cavity; and

etching the substrate under the plurality of release holes to form an isolation space.