US 12,265,258 B2
Structures and methods for high speed interconnection in photonic systems
Weiwei Song, San Jose, CA (US); Stefan Rusu, Sunnyvale, CA (US); and Mohammed Rabiul Islam, Austin, TX (US)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/232,338.
Application 18/232,338 is a continuation of application No. 18/080,684, filed on Dec. 13, 2022, granted, now 11,808,977.
Application 18/080,684 is a continuation of application No. 17/007,743, filed on Aug. 31, 2020, granted, now 11,550,102.
Prior Publication US 2023/0393337 A1, Dec. 7, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G02B 6/132 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01); H04B 10/25 (2013.01)
CPC G02B 6/132 (2013.01) [G02B 6/136 (2013.01); H04B 10/25 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12164 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photonic device, comprising:
a substrate;
a metal layer formed on the substrate;
a contact layer comprising at least one contact formed over the metal layer;
a photonic material layer disposed on the contact layer; and
a waveguide on the photonic material layer, wherein
the photonic material layer comprises: a first photonic material sublayer and a second photonic material sublayer, wherein the second photonic material sublayer comprises a top portion and a bottom portion, wherein the top portion is above the first photonic material sublayer, and the bottom portion is at a same horizontal level with the first photonic material sublayer, and
the first photonic material sublayer is formed above and in direct contact with the contact layer, and the second photonic material sublayer is formed above and in direct contact with the contact layer.