US 12,265,046 B2
Heterostructure semiconductor, chemiresistive gas sensor made thereof, and method of fabrication thereof
Neha Sakhuja, Bengaluru (IN); Ravindra Kumar Jha, Bengaluru (IN); Ranajit Sai, Bengaluru (IN); and Navakanta Bhat, Bengaluru (IN)
Assigned to INDIAN INSTITUTE OF SCIENCE, Bangalore (IN)
Filed by INDIAN INSTITUTE OF SCIENCE, Bangalore (IN)
Filed on Aug. 10, 2021, as Appl. No. 17/398,169.
Claims priority of application No. 202041034329 (IN), filed on Aug. 10, 2020.
Prior Publication US 2022/0042941 A1, Feb. 10, 2022
Int. Cl. G01N 27/12 (2006.01); C23C 26/00 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/267 (2006.01)
CPC G01N 27/127 (2013.01) [C23C 26/00 (2013.01); H01L 21/02628 (2013.01); H01L 29/0676 (2013.01); H01L 29/267 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A heterostructure semiconductor for sensing a gas, the heterostructure semiconductor comprising:
a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed;
one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and
a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal.
 
12. A method for fabrication of a heterostructure semiconductor for sensing a gas, the method comprising:
obtaining a substrate, wherein the substrate is made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed;
obtaining a solution of a precursor of 1D components to be formed on the substrate, wherein the 1D components are made of a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed;
contacting the solution of the precursor of the 1D component with the substrate to obtain a first mixture; and
irradiating the first mixture with microwaves to form the heterostructure comprising one or more of the 1-Dimensional (1D) components fabricated on a surface of the substrate and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the one or more of the 1-Dimensional (1D) components, wherein the 2D layer comprises compounds of the first and second metal.