US 12,265,038 B2
Wafer defect detection device
Yi-Chia Hwang, MiaoLi County (TW); and Ching-Liang Lin, MiaoLi County (TW)
Assigned to PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed by PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed on Dec. 16, 2022, as Appl. No. 18/082,581.
Claims priority of application No. 111145541 (TW), filed on Nov. 29, 2022; and application No. 111145542 (TW), filed on Nov. 29, 2022.
Prior Publication US 2024/0175827 A1, May 30, 2024
Int. Cl. G01N 21/95 (2006.01)
CPC G01N 21/9505 (2013.01) [G01N 2201/0636 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A wafer defect detection device, adapted for detecting a sample to be tested, wherein the sample to be tested comprises two detection features, the wafer defect detection device comprising:
a stage, adapted for holding the sample to be tested;
a light source module, configured to output a detection light to the sample to be tested on the stage and reflect a reflected light, wherein the detection light comprises a spectrum of a first light and a spectrum of a second light, the first light and the second light have two different peak wavelengths, the spectrum of the first light is adapted for detecting one of the two detection features, the spectrum of the second light is adapted for detecting other one of the two detection features, a luminous intensity of the first light and a luminous intensity of the second light are independently controlled, the reflected light comprises an image frame, and the image frame displays the two detection features; and
an image sensor, disposed on a path of the reflected light and adapted for receiving the image frame.