US 12,264,961 B2
Superconducting nanowire single photon detector and method of fabrication thereof
Chia-Jung Chung, Sunnyvale, CA (US); Faraz Najafi, Palo Alto, CA (US); George Kovall, Campbell, CA (US); Vitor R. Manfrinato, San Jose, CA (US); Vimal Kamineni, Mechanicville, NY (US); Mark Thompson, Palo Alto, CA (US); and Syrus Ziai, Los Altos, CA (US)
Assigned to PSIQUANTUM CORP., Palo Alto, CA (US)
Filed by PsiQuantum Corp., Palo Alto, CA (US)
Filed on Sep. 8, 2022, as Appl. No. 17/940,882.
Application 17/940,882 is a continuation of application No. 17/232,086, filed on Apr. 15, 2021, granted, now 11,441,941.
Application 17/232,086 is a continuation of application No. 16/849,829, filed on Apr. 15, 2020, granted, now 11,009,387, issued on May 18, 2021.
Claims priority of provisional application 62/834,924, filed on Apr. 16, 2019.
Prior Publication US 2024/0402004 A1, Dec. 5, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G01J 1/02 (2006.01); G01J 1/44 (2006.01); H01B 12/06 (2006.01)
CPC G01J 1/0204 (2013.01) [G01J 1/44 (2013.01); H01B 12/06 (2013.01); G01J 2001/442 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A superconductor device, comprising:
a superconductor layer disposed over a substrate, the superconductor layer including a layer of a superconductor material;
an oxidation barrier layer disposed between the superconductor layer and the substrate, the oxidation barrier layer configured to prevent oxidation of the superconductor layer;
a seed layer for the superconductor layer, the seed layer disposed between the oxidation barrier layer and the superconductor layer; and
a cap layer over the superconductor layer.