US 12,264,407 B2
Cu—Ni—Si based copper alloy plate, Cu—Ni—Si based copper alloy plate with plating film, and methods of producing the same
Kazuaki Sakai, Aizuwakamatsu (JP); Naoki Miyashima, Aizuwakamatsu (JP); Kazunari Maki, Aizuwakamatsu (JP); and Shinichi Funaki, Aizuwakamatsu (JP)
Assigned to MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
Appl. No. 17/911,786
Filed by MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
PCT Filed Mar. 12, 2021, PCT No. PCT/JP2021/010059
§ 371(c)(1), (2) Date Sep. 15, 2022,
PCT Pub. No. WO2021/187360, PCT Pub. Date Sep. 23, 2021.
Claims priority of application No. 2020-049473 (JP), filed on Mar. 19, 2020.
Prior Publication US 2023/0143481 A1, May 11, 2023
Int. Cl. B32B 15/01 (2006.01); B32B 15/20 (2006.01); C22C 9/06 (2006.01); C25D 3/30 (2006.01); C25D 5/50 (2006.01)
CPC C25D 5/505 (2013.01) [B32B 15/01 (2013.01); B32B 15/20 (2013.01); C22C 9/06 (2013.01); C25D 3/30 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A Cu—Ni—Si based copper alloy plate comprising
0.4% by mass or more and 5.0% by mass or less of Ni, 0.05% by mass or more and 1.2% by mass or less of Si, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; wherein
a surface Ni concentration at a plate surface is 70% or less of a center Ni concentration at the thickness center portion,
in a surface layer portion with a depth from the plate surface to where a Ni concentration becomes 90% of the center Ni concentration, the Ni concentration increases at 5% by mass/μm or more and 100% by mass/μm or less of a concentration gradient from the plate surface toward the thickness center portion.