US 12,264,396 B2
Substrate processing method
Takashi Nakazawa, Kumamoto (JP); Isamu Miyamoto, Kumamoto (JP); Keigo Satake, Kumamoto (JP); and Kenji Nakamizo, Kumamoto (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Nov. 22, 2023, as Appl. No. 18/517,341.
Application 18/517,341 is a division of application No. 17/553,971, filed on Dec. 17, 2021, granted, now 11,905,603.
Claims priority of application No. 2020-212872 (JP), filed on Dec. 22, 2020.
Prior Publication US 2024/0084458 A1, Mar. 14, 2024
Int. Cl. C23F 1/26 (2006.01); C23F 1/08 (2006.01)
CPC C23F 1/26 (2013.01) [C23F 1/08 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A substrate processing method comprising:
sending sulfuric acid as a first component from a first flow path to a mixer and sending a second component different from the first component from a second flow path different from the first flow path to the mixer;
mixing the first component and the second component by the mixer to prepare an etchant; and
ejecting the etchant from a nozzle connected to the mixer to a substrate,
wherein the substrate processing method further comprises:
measuring an instantaneous flow rate of the first component in the first flow path by a first instantaneous flowmeter provided in the first flow path and measuring an instantaneous flow rate of the second component in the second flow path by a second instantaneous flowmeter provided in the second flow path, during ejection of the etchant to the substrate; and
controlling a first flow rate controller provided in the first flow path and a second flow rate controller provided in the second flow path using an average flow rate of the first component and an average flow rate of the second component, during the ejection of the etchant to the substrate.