US 12,264,393 B2
Semiconductor processing apparatus and mixing inlet device
Jingfeng Wei, Beijing (CN); Lei Zhu, Beijing (CN); Hong Ji, Beijing (CN); and Keke Zhao, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Filed on Dec. 14, 2023, as Appl. No. 18/540,854.
Application 18/540,854 is a continuation of application No. PCT/CN2022/098565, filed on Jun. 14, 2022.
Claims priority of application No. 202110679808.7 (CN), filed on Jun. 18, 2021.
Prior Publication US 2024/0183032 A1, Jun. 6, 2024
Int. Cl. C23C 16/455 (2006.01)
CPC C23C 16/45512 (2013.01) [C23C 16/45544 (2013.01); C23C 16/45561 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A mixing inlet device, arranged at a top of a process chamber of a semiconductor processing apparatus and configured to input a process gas into the process chamber, comprising:
a cover assembly, a bottom of the cover assembly covering the top of the process chamber, including:
a mixing channel arranged in the cover assembly; and
a mixing inlet block arranged at a center position at a top of the cover assembly and including:
a plurality of inlet channels;
a first annular chamber, a top of the first annular chamber communicating with the plurality of inlet channels; and
a mixing chamber arranged at the bottom of the first annular chamber and coaxially with the first annular chamber;
wherein:
the mixing channel is configured to mix the process gas in the mixing inlet block again and input the process gas into the process chamber;
the plurality of inlet channels extend along a tangential direction of a circumference of the first annular chamber; and
outlet holes of the plurality of inlet channels are distributed evenly along a circumferential direction of the first annular chamber.