US 12,264,392 B2
Silicon precursor compounds and method for forming silicon-containing films
Sungsil Cho, Anyang-si (KR); DaHye Kim, Suwon-si (KR); SooJin Lee, Suwon-si (KR); Jae Eon Park, HwaSung (KR); Bryan C. Hendrix, Danbury, CT (US); Philip S. H. Chen, Bethel, CT (US); and Shawn D. Nguyen, Danbury, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Jun. 23, 2021, as Appl. No. 17/356,252.
Claims priority of provisional application 63/081,711, filed on Sep. 22, 2020.
Claims priority of provisional application 63/042,769, filed on Jun. 23, 2020.
Prior Publication US 2021/0395884 A1, Dec. 23, 2021
Int. Cl. C23C 16/00 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/345 (2013.01) [C23C 16/36 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for forming a silicon-containing film on the surface of a microelectronic device, which comprises introducing at least one compound of Formula (I):

OG Complex Work Unit Chemistry
wherein each R1 is independently chosen from hydrogen or C1-C4 alkyl, and each R2 is independently chosen from chloro, bromo, iodo, hydrogen, or C1-C4 alkyl, provided that no fewer than two of R2 is chosen from chloro, bromo, or iodo, to said surface in a reaction chamber, under atomic layer deposition conditions at a temperature of greater than 600° C., the atomic layer deposition conditions are non-plasma conditions, the silicon-containing film is free of halides, the silicon-containing film is a silicon nitride film with about 9% to about 13% carbon with a silicon to nitrogen ratio of about 1:1, and wherein the compound of Formula (I) has a purity of greater than 98%.