US 12,264,390 B1
Pure copper material, insulating substrate, and electronic device
Yuki Ito, Kitamoto (JP); Takumi Odaira, Kitamoto (JP); Kenichiro Kawasaki, Kitamoto (JP); and Kazunari Maki, Kitamoto (JP)
Assigned to MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
Appl. No. 18/841,018
Filed by MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
PCT Filed Jul. 27, 2023, PCT No. PCT/JP2023/027650
§ 371(c)(1), (2) Date Aug. 23, 2024,
PCT Pub. No. WO2024/024909, PCT Pub. Date Feb. 1, 2024.
Claims priority of application No. 2022-121434 (JP), filed on Jul. 29, 2022; and application No. 2023-120992 (JP), filed on Jul. 25, 2023.
Int. Cl. C22C 9/00 (2006.01); H01L 23/00 (2006.01); H01L 23/15 (2006.01); H01L 23/498 (2006.01)
CPC C22C 9/00 (2013.01) [H01L 23/15 (2013.01); H01L 23/49866 (2013.01); H01L 24/32 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A pure copper material comprising:
Cu;
one or more A-group elements selected from Ca, Ba, Sr, Zr, Hf, Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; and
one or more B-group elements selected from O, S, Se, and Te, wherein
an amount of Cu is 99.96 mass % or more,
a total amount of the A-group elements and the B-group elements is 10 mass ppm or more and 300 mass ppm or less,
a ratio A/B of a total amount A mass ppm of the A-group elements to a total amount B mass ppm of the B-group elements is more than 1.0,
an average crystal grain size in a rolled surface is 15 μm or more, and
a high-temperature Vickers hardness at 850° C. is 4.0 HV or more and 10.0 HV or less.