US 12,264,273 B2
Semiconductor nanoparticles and method of producing semiconductor nanoparticles
Susumu Kuwabata, Ibaraki (JP); Taro Uematsu, Suita (JP); Kazutaka Wajima, Toyonaka (JP); Tsukasa Torimoto, Nagoya (JP); Tatsuya Kameyama, Nagoya (JP); Daisuke Oyamatsu, Tokushima (JP); and Kenta Niki, Tokushima (JP)
Assigned to OSAKA UNIVERSITY, Suita (JP); NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, Nagoya (JP); and NICHIA CORPORATION, Anan (JP)
Filed by OSAKA UNIVERSITY, Suita (JP); NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, Nagoya (JP); and NICHIA CORPORATION, Anan (JP)
Filed on Sep. 11, 2023, as Appl. No. 18/464,517.
Application 18/464,517 is a division of application No. 17/449,255, filed on Sep. 28, 2021, granted, now 11,788,003.
Application 16/732,877 is a division of application No. 15/459,767, filed on Mar. 15, 2017, granted, now 10,563,122, issued on Feb. 18, 2020.
Application 17/449,255 is a continuation of application No. 16/732,877, filed on Jan. 2, 2020, granted, now 11,162,024, issued on Nov. 2, 2021.
Claims priority of application No. 2016-055299 (JP), filed on Mar. 18, 2016; application No. 2016-177631 (JP), filed on Sep. 12, 2016; and application No. 2017-037487 (JP), filed on Feb. 28, 2017.
Prior Publication US 2023/0416603 A1, Dec. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 11/62 (2006.01); B01J 13/02 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C09B 67/02 (2006.01); C09K 11/02 (2006.01); G02F 1/1335 (2006.01); G02F 1/13357 (2006.01); H01L 33/50 (2010.01)
CPC C09K 11/621 (2013.01) [B01J 13/02 (2013.01); C09B 67/0097 (2013.01); C09K 11/02 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G02F 1/133614 (2021.01); G02F 1/133617 (2013.01); H01L 33/502 (2013.01); Y10S 977/774 (2013.01); Y10S 977/813 (2013.01); Y10S 977/892 (2013.01); Y10S 977/896 (2013.01); Y10S 977/95 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method of producing semiconductor nanoparticles, comprising:
providing a dispersion by dispersing primary semiconductor nanoparticles into a solvent, each of the primary semiconductor nanoparticles comprising a semiconductor that contains M1, M2, and Z, wherein M1 is at least one element selected from the group consisting of Ag, Cu, and Au, and comprises at least Ag, M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl, and comprises at least In, and Z is at least one element selected from the group consisting of S, Se, and Te, and comprises at least S; and
adding, to the dispersion, a compound containing a Group 13 element, and an elemental substance of a Group 16 element or a compound containing the Group 16 element to form a semiconductor layer comprising the Group 13 element and the Group 16 element on a surface of each of the primary semiconductor nanoparticles,
wherein the Group 13 element comprises at least Ga and the Group 16 element comprises at least S,
wherein the semiconductor layer has an amorphous structure, and
wherein a photoluminescence lifetime of the semiconductor nanoparticles is 200 ns or less.