US 12,264,266 B2
Chemical mechanical polishing liquid
Xiaoming Ren, Shanghai (CN); Changzheng Jia, Shanghai (CN); and Shoutian Li, Shanghai (CN)
Assigned to ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD., Shanghai (CN)
Appl. No. 17/785,000
Filed by ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD, Shanghai (CN)
PCT Filed Dec. 3, 2020, PCT No. PCT/CN2020/133613
§ 371(c)(1), (2) Date Jun. 13, 2022,
PCT Pub. No. WO2021/121049, PCT Pub. Date Jun. 24, 2021.
Claims priority of application No. 201911320538.X (CN), filed on Dec. 19, 2019.
Prior Publication US 2023/0032899 A1, Feb. 2, 2023
Int. Cl. C09G 1/02 (2006.01)
CPC C09G 1/02 (2013.01) 7 Claims
OG exemplary drawing
 
1. A chemical mechanical polishing solution, consisting of cerium oxide, a polyacrylic acid, a polyether amine, water, and a pH regulator, wherein said polyether amine is:

OG Complex Work Unit Chemistry
wherein X is 3-68;
wherein a molecular weight of said polyether amine is 230-4,000;
wherein a content of said polyether amine is 1-400 ppm;
wherein a content of said polyacrylic acid is 400-1,500 ppm; and
wherein a pH of the chemical mechanical polishing solution ranges from 4 to 5.