US 12,264,258 B2
Compositions comprising silacycloalkanes and methods using same for deposition of silicon-containing film
Raymond N. Vrtis, Carlsbad, CA (US); Robert G. Ridgeway, Chandler, AZ (US); Xinjian Lei, Vista, CA (US); Ming Li, San Marcos, CA (US); and Manchao Xiao, San Diego, CA (US)
Assigned to Versum Materials US, LLC, Tempe, AZ (US)
Appl. No. 17/629,698
Filed by VERSUM MATERIALS US, LLC, Tempe, AZ (US)
PCT Filed Jul. 24, 2020, PCT No. PCT/US2020/043478
§ 371(c)(1), (2) Date Jan. 24, 2022,
PCT Pub. No. WO2021/016553, PCT Pub. Date Jan. 28, 2021.
Claims priority of provisional application 62/878,724, filed on Jul. 25, 2019.
Prior Publication US 2022/0267642 A1, Aug. 25, 2022
Int. Cl. C09D 183/16 (2006.01); C08G 77/50 (2006.01); C23C 16/30 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01)
CPC C09D 183/16 (2013.01) [C08G 77/50 (2013.01); C23C 16/308 (2013.01); C23C 16/325 (2013.01); C23C 16/345 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method for depositing a silicon-containing film in a flowable chemical deposition process, the method comprising:
placing a substrate comprising a surface feature into a reactor which is at one or more temperatures ranging from −20° C. to about 150° C., wherein the surface feature comprises a pore, a via, or a trench;
introducing into the reactor a composition comprising at least one silacycloalkane precursor compound represented by formula I:

OG Complex Work Unit Chemistry
wherein R1 is selected from the group consisting of a linear or branched C1 to C10 alkyl group, cyclic C3 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, and a linear or branched C2 to C10 alkynyl group; R2 is selected from the group consisting of a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group, and cyclic C3 to C10 alkyl group; R3 and R4 are each independently selected from the group consisting of hydrogen, and a linear or branched C to C10 alkyl group; and n is an integer from 3-6;
providing a plasma source into the reactor to at least partially react the at least one silacycloalkane precursor compound to form a flowable liquid, wherein the plasma source comprises nitrogen, and wherein the flowable liquid at least partially fills a portion of the surface feature, and wherein the at least one silacycloalkane precursor compound is substantially free of self-polymerization or self-oligomerization impurities, and wherein the at least one silacycloalkane precursor compound comprises impurities at a concentration of 10 ppm or less, the impurities being selected from the group consisting of chlorides, fluorides, bromides, iodides, Li, Na, K, Mg, Ca, Al, Fe, Ni, Cr as measured by IC or ICP MS; and
wherein the silicon-containing film is selected from the group consisting of silicon carbide, silicon nitride, carbon doped silicon nitride, silicon oxynitride, and carbon doped silicon oxynitride film.