| CPC B29D 11/00788 (2013.01) [B29D 11/00865 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); G02B 1/002 (2013.01); G02B 5/0268 (2013.01); G02B 5/208 (2013.01); G02B 2207/101 (2013.01)] | 11 Claims |
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1. A method of forming an etched nano-scale pattern on a substrate, the method comprising:
(i) providing a multi-layer material stack comprising
(a) a first substrate having a patterned surface, the patterned surface of the first substrate including one or more recessed features, each recessed feature adjoining at least one plateau feature extending away from the recessed feature;
(b) a masking layer overlaying at least a portion of the patterned surface of the first substrate;
(c) a first etch resist comprising a first etch resistant material overlaying the masking layer;
(d) a pattern transfer layer overlaying at least a portion of the first etch resist;
(e) a second etch resist comprising a second etch resistant material overlaying the pattern transfer layer; and
(f) a second substrate overlaying the second etch resist;
(ii) removing the patterned surface of the first substrate from the masking layer and the first etch resist to create a patterned surface of the masking layer on the first etch resist, wherein the patterned surface of the masking layer comprises plateau features corresponding to the recessed features of the patterned surface of the first substrate surrounded by recessed areas corresponding to the plateau features of the patterned surface of the first substrate;
(iii) performing a first etching step to the patterned surface of the masking layer to remove the masking layer and the first etch resistant material in the recessed areas of the masking layer to expose the underlying pattern transfer layer without removing the first etch resistant material covered by the masking layer forming the plateau features of the masking layer, thereby forming a first etched nanoscale pattern on the pattern transfer layer, wherein the first etched nano-scale pattern comprises a plurality of first nano-scale features; and
(iv) performing a second selective etching step to remove the pattern transfer layer in the recessed areas exposing the second etch resist layer and to remove the masking layer in the plateau regions to expose the first etch resist layer thereby forming a second etched nanoscale pattern on the second substrate, wherein the second etched nano-scale pattern comprises a plurality of second nano-scale features;
wherein each second nano-scale feature exhibits at least one dimension from 1 nm to 900 nm; and
wherein the second substrate is not etched.
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