US 12,263,539 B2
Manufacturing methods of wafer and chips and position adjustment method of laser beam
Kazuki Hashimoto, Tokyo (JP)
Assigned to DISCO CORPORATION, Tokyo (JP)
Filed by DISCO CORPORATION, Tokyo (JP)
Filed on Mar. 3, 2022, as Appl. No. 17/653,371.
Claims priority of application No. 2021-037482 (JP), filed on Mar. 9, 2021.
Prior Publication US 2022/0288722 A1, Sep. 15, 2022
Int. Cl. B23K 26/364 (2014.01); B23K 101/40 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01)
CPC B23K 26/364 (2015.10) [H01L 21/02013 (2013.01); H01L 21/76894 (2013.01); B23K 2101/40 (2018.08)] 15 Claims
OG exemplary drawing
 
1. A manufacturing method of a wafer, comprising:
a preparation step of preparing a wafer that includes a substrate and a stacked body disposed on a front surface side of the substrate and that has a device region and an outer circumferential surplus region, the device region having a plurality of devices disposed in a plurality of regions marked out by a plurality of planned dividing lines arranged to intersect each other, the outer circumferential surplus region surrounding the device region; and
a laser processed groove forming step of forming laser processed grooves along the planned dividing lines through executing irradiation with a first laser beam with a wavelength having absorbability with respect to the stacked body, along the planned dividing lines from a side of the stacked body of the wafer, wherein
an irradiation condition of the first laser beam is set to cause melting of the stacked body to occur more readily in the outer circumferential surplus region than in the device region.