US 12,263,537 B2
Control device for laser annealing apparatus and laser annealing method
Yasuhiro Okada, Yokosuka (JP); and Masafumi Yorozu, Yokosuka (JP)
Assigned to SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo (JP)
Filed by SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo (JP)
Filed on Dec. 16, 2022, as Appl. No. 18/067,121.
Application 18/067,121 is a continuation of application No. PCT/JP2021/022562, filed on Jun. 14, 2021.
Claims priority of application No. 2020-104999 (JP), filed on Jun. 18, 2020.
Prior Publication US 2023/0120514 A1, Apr. 20, 2023
Int. Cl. B29C 71/04 (2006.01); B23K 26/0622 (2014.01); B23K 26/08 (2014.01); B23K 26/082 (2014.01); B23K 26/351 (2014.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01); H01S 3/00 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); H01L 21/67 (2006.01)
CPC B23K 26/351 (2015.10) [B23K 26/0622 (2015.10); B23K 26/0624 (2015.10); B23K 26/082 (2015.10); B23K 26/083 (2013.01); H01L 21/268 (2013.01); H01S 3/0085 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); H01L 21/67115 (2013.01)] 5 Claims
OG exemplary drawing
 
5. A laser annealing method comprising:
determining laser power of a pulsed laser beam that is incident on a laser irradiation surface of a semiconductor wafer and a beam size of the pulsed laser beam on the laser irradiation surface of the semiconductor wafer, from a first target value of a highest attainment temperature of the laser irradiation surface of the semiconductor wafer;
determining a pulse repetition frequency and a sweep speed under a condition that two consecutive shots of beam spots partially overlap each other or are in contact with each other when sweeping a beam spot of the pulsed laser beam on the laser irradiation surface of the semiconductor wafer;
determining the sweep speed under a condition that a highest attainment temperature of a back surface on a side opposite to the laser irradiation surface of the semiconductor wafer does not exceed a second target value, when determining the sweep speed; and
performing laser annealing of the semiconductor wafer at the determined laser power, beam size, pulse repetition frequency, and sweep speed of the beam spot.