US 11,944,018 B2
Magnetoresistance effect element
Kazuumi Inubushi, Tokyo (JP); Katsuyuki Nakada, Tokyo (JP); and Shinto Ichikawa, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Jul. 6, 2022, as Appl. No. 17/858,200.
Claims priority of application No. 2021-116965 (JP), filed on Jul. 15, 2021.
Prior Publication US 2023/0025589 A1, Jan. 26, 2023
Int. Cl. G11C 11/00 (2006.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); G11B 5/37 (2006.01); G11C 11/16 (2006.01)
CPC H10N 50/85 (2023.02) [H10N 50/10 (2023.02); G11B 5/372 (2013.01); G11C 11/161 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A magnetoresistance effect element comprising a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order,
wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1),
RuαX1-α  (1)
where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol α represents a number satisfying 0.5<α<1,
the first ferromagnetic layer contains a Heusler alloy, and
the second ferromagnetic layer contains a Heusler alloy.