US 11,943,936 B2
Semiconductor device and method of manufacturing the same
Yu-Der Chih, Hsin-Chu (TW); May-Be Chen, Hsinchu (TW); Yun-Sheng Chen, Hsinchu County (TW); Jonathan Tsung-Yung Chang, Hsinchu (TW); Wen Zhang Lin, Hsinchu (TW); Chrong Jung Lin, Hsinchu (TW); Ya-Chin King, Taipei (TW); Chieh Lee, Miaoli County (TW); and Wang-Yi Lee, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Aug. 12, 2021, as Appl. No. 17/400,615.
Prior Publication US 2023/0050978 A1, Feb. 16, 2023
Int. Cl. H10B 63/00 (2023.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01)
CPC H10B 63/30 (2023.02) [H01L 29/401 (2013.01); H01L 29/785 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first transistor, comprising:
a first gate structure over a first fin;
a first source/drain (S/D) feature;
a first conductive feature electrically coupled to the first S/D feature; and
a second conductive feature disposed on the first conductive feature;
a first resistive random access memory (RRAM) resistor; and
a second RRAM resistor, wherein
the first RRAM resistor comprises a first resistive material layer, a first electrode shared by the second RRAM resistor, a second electrode, a second gate structure over a second fin, and a second S/D feature electrically coupled to the second electrode;
the second RRAM resistor comprises the first electrode, a second resistive material layer, and a third electrode;
the first electrode is electrically coupled to the first transistor and protrudes from the second conductive feature of the first transistor; and
the first fin extends along a first direction, and the second fin extends along a second direction different from the first direction.