US 11,943,935 B2
Layout pattern of magnetoresistive random access memory
Chun-Yen Tseng, Tainan (TW); Shu-Ru Wang, Taichung (TW); Yu-Tse Kuo, Tainan (TW); Chang-Hung Chen, Tainan (TW); Yi-Ting Wu, Tainan (TW); Shu-Wei Yeh, Taichung (TW); Ya-Lan Chiou, Tainan (TW); and Chun-Hsien Huang, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Sep. 26, 2022, as Appl. No. 17/952,337.
Application 17/952,337 is a continuation of application No. 17/006,928, filed on Aug. 31, 2020, granted, now 11,489,010.
Claims priority of application No. 202010770916.0 (CN), filed on Aug. 4, 2020.
Prior Publication US 2023/0020795 A1, Jan. 19, 2023
Int. Cl. H10B 61/00 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/22 (2023.02) [H10N 50/80 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A layout pattern of a magnetoresistive random access memory (MRAM), comprising:
a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region; and
a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region, wherein the diffusion region comprises a H-shape and the diffusion region further comprising:
a first portion extending from the first cell region to the third cell region along a first direction on the substrate;
a second portion extending from the second cell region to the fourth cell region along the first direction on the substrate;
a third portion extending from the first cell region to the second cell region along a second direction for connecting the first portion and the second portion;
a fourth portion extending from the third cell region to the fourth cell region along the second direction for connecting the first portion and the second portion; and
a fifth portion extending between the third portion and the fourth portion along the second direction for connecting the first portion and the second portion.