US 11,943,922 B1
Non-volatile memory with three dimensional stacked word line switches
Guangyuan Li, Santa Clara, CA (US); Qinghua Zhao, San Carlos, CA (US); Sudarshan Narayanan, San Jose, CA (US); Yuji Totoki, Milpitas, CA (US); and Fumiaki Toyama, Cupertino, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Nov. 11, 2023, as Appl. No. 18/507,026.
Int. Cl. H10B 43/20 (2023.01); H10B 41/20 (2023.01)
CPC H10B 43/20 (2023.02) [H10B 41/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A non-volatile memory apparatus, comprising:
a plurality of non-volatile memory cells;
a plurality of word lines connected to the non-volatile memory cells;
a plurality of driver lines configured to carry one or more word line voltages; and
a plurality of word line switches that selectively connect the driver lines to the word lines, the word line switches are arranged in a plurality of three dimensional stacks, each stack of the plurality of three dimensional stacks comprises multiple word line switches vertically stacked.