US 11,943,919 B2
Microelectronic devices including two-dimensional materials, and related memory devices and electronic systems
Kamal M. Karda, Boise, ID (US); Akira Goda, Tokyo (JP); Sanh D. Tang, Meridian, ID (US); Gurtej S. Sandhu, Boise, ID (US); Litao Yang, Boise, ID (US); and Haitao Liu, Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 16, 2021, as Appl. No. 17/445,134.
Application 17/445,134 is a division of application No. 16/549,519, filed on Aug. 23, 2019, granted, now 11,127,747.
Prior Publication US 2021/0375893 A1, Dec. 2, 2021
Int. Cl. H10B 41/35 (2023.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 41/35 (2023.02) [H01L 21/76877 (2013.01); H01L 21/823412 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/24 (2013.01); H01L 29/78621 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
discrete dielectric structures overlying an isolation structure and separated from one another by filled trenches;
a non-planar 2D material structure extending over surfaces of the isolation structure and the discrete dielectric structures inside and outside of the filled trenches, the non-planar 2D material structure comprising:
conductively doped regions; and
channel regions between the conductively doped regions;
gate structures overlying and substantially aligned with the channel regions of the non-planar 2D material structure;
conductive structures extending from the gate structures and into the filled trenches;
contact structures coupled to some of the conductively doped regions and extending into the isolation structure; and
at least one additional contact structure coupled to at least one other of the conductively doped regions and extending away from the isolation structure.