US 11,943,908 B2
Method, structures and devices for intra-connection structures
Feng-Ming Chang, Zhubei (TW); and Kuo-Hsiu Hsu, Zhongli (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 9, 2020, as Appl. No. 17/092,768.
Application 15/658,660 is a division of application No. 14/278,375, filed on May 15, 2014, granted, now 9,721,956, issued on Aug. 1, 2017.
Application 17/092,768 is a continuation of application No. 16/397,353, filed on Apr. 29, 2019, granted, now 10,833,090.
Application 16/397,353 is a continuation of application No. 15/658,660, filed on Jul. 25, 2017, granted, now 10,276,580, issued on Apr. 30, 2019.
Prior Publication US 2021/0057422 A1, Feb. 25, 2021
Int. Cl. H10B 10/00 (2023.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 27/02 (2006.01); H10B 99/00 (2023.01)
CPC H10B 10/12 (2023.02) [H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 23/485 (2013.01); H01L 27/0207 (2013.01); H10B 99/00 (2023.02); H01L 2924/0002 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first pull-up transistor comprising a first source/drain region and a first gate structure;
a second pull-up transistor comprising a second source/drain region and a second gate structure;
a first contact contacting the first source/drain region, the first contact extending into a second side of the second gate structure, the first contact physically contacting a top surface and an entirety of a sidewall of the second gate structure;
a first spacer separating the first contact from a first side of the first gate structure, top surfaces of the first spacer and the first contact being coplanar;
a second contact contacting the second source/drain region, the second contact extending into the first side of the first gate structure, the second contact physically contacting a top surface and an entirety of a sidewall of the first gate structure; and
a second spacer separating the second contact from the second side of the second gate structure, top surfaces of the second spacer and the second contact being coplanar.