US 11,942,919 B2
Strain compensated rare earth group III-nitride heterostructures
John A. Logan, Lawrence, MA (US); Jason C. Soric, North Andover, MA (US); Adam E. Peczalski, Everett, MA (US); Brian D. Schultz, Lexington, MA (US); and Eduardo M. Chumbes, Andover, MA (US)
Assigned to Raytheon Company, Tewksbury, MA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on Jan. 11, 2021, as Appl. No. 17/145,665.
Prior Publication US 2022/0224306 A1, Jul. 14, 2022
Int. Cl. H03H 9/02 (2006.01); H03H 3/04 (2006.01); H03H 9/17 (2006.01); H03H 3/02 (2006.01)
CPC H03H 9/02133 (2013.01) [H03H 3/04 (2013.01); H03H 9/02031 (2013.01); H03H 9/02102 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 2003/023 (2013.01); H03H 2003/0407 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A strain compensated heterostructure comprising:
a substrate comprising silicon carbide material;
a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of said substrate;
a second epitaxial layer formed on said first epitaxial layer opposite said top surface of said substrate, said second epitaxial layer comprising single-crystal scandium aluminum nitride material; and
a third epitaxial layer formed on said second epitaxial layer opposite said first epitaxial layer, said third layer comprising single-crystal aluminum nitride material.