US 11,942,762 B2
Surface-emitting laser device and light emitting device including the same
Jeong Sik Lee, Seoul (KR); Sang Heon Han, Seoul (KR); Keun Uk Park, Seoul (KR); and Yeo Jae Yoon, Seoul (KR)
Assigned to SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
Appl. No. 17/043,144
Filed by SUZHOU LEKIN SEMICONDUCTOR CO., LTD., Taicang (CN)
PCT Filed Apr. 4, 2019, PCT No. PCT/KR2019/003999
§ 371(c)(1), (2) Date Sep. 29, 2020,
PCT Pub. No. WO2019/194600, PCT Pub. Date Oct. 10, 2019.
Claims priority of application No. 10-2018-0039085 (KR), filed on Apr. 4, 2018; application No. 10-2018-0073795 (KR), filed on Jun. 27, 2018; and application No. 10-2018-0125167 (KR), filed on Oct. 19, 2018.
Prior Publication US 2021/0028603 A1, Jan. 28, 2021
Int. Cl. H01S 5/183 (2006.01)
CPC H01S 5/18394 (2013.01) [H01S 5/18311 (2013.01); H01S 5/18377 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A surface light emitting laser device comprising:
a first electrode;
a substrate disposed on the first electrode;
a first reflection layer disposed on the substrate;
an active region disposed on the first reflection layer and including a cavity;
an opening region disposed on the active region and including an aperture and an insulating region;
a second reflection layer disposed on the opening region;
a second electrode disposed on the second reflection layer; and
a delta doping layer disposed in the opening region,
wherein a thickness of the insulating region becomes thinner into the aperture direction,
wherein the delta doped layer is disposed in the aperture,
wherein the aperture includes first AlGa-based layers and a second AlGa-based layer, the second AlGa-based layer is disposed between the first AlGa-based layers, and a second Al concentration of the second AlGa-based layer is higher than a first Al concentration of the first AlGa-based layers, and
wherein the delta doped layer is disposed directly on the second AlGa-based layer, and is different from the first and second AlGa-based layers.