US 11,942,573 B2
Deep UV light emitting diode
Tae Gyun Kim, Gyeonggi-do (KR); and Kyu Ho Lee, Gyeonggi-do (KR)
Assigned to Seoul Viosys Co., Ltd., Gyeonggi-do (KR)
Filed by SEOUL VIOSYS CO., LTD., Gyeonggi-do (KR)
Filed on Jun. 10, 2021, as Appl. No. 17/344,691.
Application 17/344,691 is a continuation of application No. PCT/KR2019/017224, filed on Dec. 6, 2019.
Claims priority of application No. 10-2019-0004547 (KR), filed on Jan. 14, 2019.
Prior Publication US 2021/0305459 A1, Sep. 30, 2021
Int. Cl. H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/382 (2013.01) [H01L 33/46 (2013.01); H01L 33/62 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A deep UV light emitting diode, comprising:
a substrate;
an n-type semiconductor layer located on the substrate;
a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer;
an n-ohmic contact layer in contact with the n-type semiconductor layer;
a p-ohmic contact layer in contact with the p-type semiconductor layer;
an n-bump electrically connected to the n-ohmic contact layer; and
a p-bump electrically connected to the p-ohmic contact layer, wherein:
the mesa includes a plurality of vias exposing the n-type semiconductor layer,
the mesa has an elongated rectangular shape along a longitudinal direction,
the vias are arranged parallel to one another in a direction perpendicular to the longitudinal direction, and
the n-ohmic contact layer is formed on the n-type semiconductor layer exposed around the mesa and on the n-type semiconductor layer disposed in the vias, respectively.