US 11,942,571 B2
LED with active region disposed within an optical cavity defined by an embedded nanostructured layer and a reflector
Venkata Ananth Tamma, San Jose, CA (US); and Toni Lopez, Aachen (DE)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by LUMILEDS LLC, San Jose, CA (US)
Filed on Apr. 21, 2020, as Appl. No. 16/854,767.
Claims priority of provisional application 62/837,099, filed on Apr. 22, 2019.
Prior Publication US 2020/0335661 A1, Oct. 22, 2020
Int. Cl. H01L 33/10 (2010.01); H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/10 (2013.01) [H01L 27/156 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A light emitting device comprising:
a semiconductor diode structure comprising an active region, a top surface, an oppositely positioned bottom surface, and side surfaces connecting the top and bottom surfaces;
an array of nanoantennas embedded in the semiconductor diode structure between the active region and the top surface; and
a reflector located on the opposite side of the active region from the nanostructured layer,
the array of nanoantennas and the reflector forming an optical cavity that defines a plurality of cavity modes and a density of states, structures and positions of the nanoantennas and the reflector resulting in the cavity modes and density of states being tuned to achieve a selected level of internal quantum efficiency.