US 11,942,570 B2
Micro light-emitting diode comprising nanoring and manufacturing method thereof
Kuo-Tung Huang, Chongqing (CN); Ya-Wen Lin, Chongqing (CN); and Chia-Hung Huang, Chongqing (CN)
Assigned to CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD., Chongqing (CN)
Filed by CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD., Chongqing (CN)
Filed on Aug. 3, 2021, as Appl. No. 17/392,665.
Application 17/392,665 is a continuation of application No. PCT/CN2020/085967, filed on Apr. 21, 2020.
Prior Publication US 2021/0367101 A1, Nov. 25, 2021
Int. Cl. H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/50 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 33/0093 (2020.05); H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/502 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0041 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A micro light-emitting diode (LED), comprising:
a first semiconductor layer, an active layer, and a second semiconductor layer that are successively stacked together, wherein
the first semiconductor layer and the second semiconductor layer are of different types;
the active layer comprises a first quantum well layer and a second quantum well layer stacked together;
the second quantum well layer and the second semiconductor layer form a nanoring;
the first quantum well layer is configured to emit light of a first color, and the second quantum well layer forming a sidewall of the nanoring is configured to emit light of a second color different from the first color; and
the first semiconductor layer is electrically coupled to a first electrode, and the second semiconductor layer is electrically coupled to a second electrode.