US 11,942,567 B2
Light-emitting element, method of manufacturing the same and display device comprising light-emitting element
Jung Hong Min, Pyeongtaek-si (KR); Dae Hyun Kim, Hwaseong-si (KR); Hyun Min Cho, Seoul (KR); Jong Hyuk Kang, Suwon-si (KR); Dong Uk Kim, Hwaseong-si (KR); Seung A Lee, Seoul (KR); Hyun Deok Im, Seoul (KR); and Hyung Rae Cha, Seoul (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co. Ltd., Yongin-si (KR)
Filed on Jul. 15, 2021, as Appl. No. 17/377,266.
Application 17/377,266 is a continuation of application No. 16/435,313, filed on Jun. 7, 2019, granted, now 11,069,829.
Claims priority of application No. 10-2018-0066729 (KR), filed on Jun. 11, 2018.
Prior Publication US 2021/0343894 A1, Nov. 4, 2021
Int. Cl. H01L 33/00 (2010.01); H01L 33/30 (2010.01)
CPC H01L 33/0093 (2020.05) [H01L 33/0066 (2013.01); H01L 33/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A display device comprising:
a first electrode and a second electrode spaced from each other on a substrate; and
a light-emitting element on the first electrode and the second electrode,
wherein the light-emitting element comprises a first semiconductor layer and a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and an insulating film surrounding at least a portion of the active layer, the first semiconductor layer, the active layer, and the second semiconductor layer being stacked along a height direction of the light-emitting element,
wherein the light-emitting element has an aspect ratio of a height of the light-emitting element to a width of the light-emitting element that is greater than 1,
wherein a first end portion of the insulating film protrudes to extend beyond a first surface of the first semiconductor layer, and
wherein the first surface is an opposite surface of a second surface of the first semiconductor layer facing the active layer.