US 11,942,553 B2
Method for fabricating a semiconductor device
Jae Kyeong Jeong, Seoul (KR); Yun Heub Song, Seoul (KR); Chang Hwan Choi, Seoul (KR); and Hyeon Joo Seul, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 17, 2020, as Appl. No. 17/124,692.
Application 17/124,692 is a continuation of application No. 16/450,218, filed on Jun. 24, 2019, granted, now 10,892,366.
Claims priority of application No. 10-2018-0072751 (KR), filed on Jun. 25, 2018.
Prior Publication US 2021/0104632 A1, Apr. 8, 2021
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01); H10B 41/20 (2023.01); H10B 41/23 (2023.01); H10B 41/27 (2023.01); H10B 41/60 (2023.01); H10B 41/70 (2023.01); H10B 43/23 (2023.01); H10B 43/27 (2023.01); H10B 51/20 (2023.01); H10B 53/20 (2023.01); H10B 63/00 (2023.01)
CPC H01L 29/7869 (2013.01) [H01L 29/66757 (2013.01); H10B 41/20 (2023.02); H10B 41/23 (2023.02); H10B 41/27 (2023.02); H10B 41/60 (2023.02); H10B 41/70 (2023.02); H10B 43/23 (2023.02); H10B 43/27 (2023.02); H10B 51/20 (2023.02); H10B 53/20 (2023.02); H10B 63/84 (2023.02); H10B 63/845 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
sequentially forming a liner film and a metal oxide film on a substrate, the liner film including a transition metal and being in contact with the metal oxide film;
crystallizing the metal oxide film through an annealing process;
forming a liner pattern and a metal oxide pattern on the substrate by patterning the liner film and the metal oxide film;
forming an insulating film extending along a sidewall of the liner pattern, a sidewall of the metal oxide pattern, and an upper surface of the metal oxide pattern; and
forming a gate electrode on the insulating film,
wherein the annealing process is performed in a nitrogen atmosphere or an oxygen atmosphere.