US 11,942,534 B2
Bipolar transistor with thermal conductor
Hong Yu, Clifton Park, NY (US); Judson R. Holt, Ballston Lake, NY (US); and Vibhor Jain, Williston, VT (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on May 16, 2022, as Appl. No. 17/745,178.
Claims priority of provisional application 63/317,749, filed on Mar. 8, 2022.
Prior Publication US 2023/0290868 A1, Sep. 14, 2023
Int. Cl. H01L 29/737 (2006.01); H01L 23/373 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/737 (2013.01) [H01L 23/3738 (2013.01); H01L 29/66242 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A structure comprising:
a base formed within a semiconductor substrate;
a thermal conductive material comprising semiconductor material which is under the base and a buried insulator material, and extends to an underlying semiconductor material;
an emitter on a first side of the base; and
a collector on a second side of the base,
wherein the thermal conductive material comprises a material different than the semiconductor substrate and further comprises a via of the thermal conductive material within the buried insulator material underneath the semiconductor substrate, and wherein the via of the thermal conductive material contacts the semiconductor substrate.