US 11,942,519 B2
Semiconductor structure and high electron mobility transistor
Chih-Yen Chen, Hsinchu (TW); and Franky Juanda Lumbantoruan, Sumatera Utara (ID)
Assigned to Vanguard International Semiconductor Corporation, Hsinchu (TW)
Filed by Vanguard International Semiconductor Corporation, Hsinchu (TW)
Filed on Sep. 1, 2021, as Appl. No. 17/463,577.
Prior Publication US 2023/0066042 A1, Mar. 2, 2023
Int. Cl. H01L 29/205 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/205 (2013.01) [H01L 29/155 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/7786 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a superlattice structure, disposed on a substrate;
an electrical isolation layer, disposed on the superlattice structure;
a channel layer, disposed on the electrical isolation layer; and
a composition gradient layer, disposed between the electrical isolation layer and the superlattice structure, wherein the composition gradient layer and the superlattice structure include a same group III element, and an atomic percentage of the same group III element in the composition gradient layer is gradually decreased in a direction from the superlattice structure to the electrical isolation layer.