	US 11,942,515 B2
	Semiconductor device having asymmetrical source/drain
Jongki Jung, Hwaseong-si (KR); Myungil Kang, Yongin-si (KR); Yoonhae Kim, Suwon-si (KR); and Kwanheum Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 21, 2022, as Appl. No. 17/725,617.
Application 17/725,617 is a continuation of application No. 16/875,314, filed on May 15, 2020, granted, now 11,322,590.
Application 16/875,314 is a continuation of application No. 15/880,969, filed on Jan. 26, 2018, granted, now 10,658,463.
Application 15/880,969 is a continuation of application No. 15/423,406, filed on Feb. 2, 2017, granted, now 9,882,004, issued on Jan. 30, 2018.
Application 15/423,406 is a continuation of application No. 14/987,813, filed on Jan. 5, 2016, granted, now 9,601,575, issued on Mar. 21, 2017.
Claims priority of application No. 10-2015-0057193 (KR), filed on Apr. 23, 2015.
Prior Publication US 2022/0246724 A1, Aug. 4, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)

CPC H01L 29/0847 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/1608 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01)]

20 Claims

1. A semiconductor device, comprising:

a substrate;

a first active fin on the substrate, wherein the first active fin comprises a first side surface and a second side surface opposing the first side surface of the first active fin;

a second active fin on the substrate, wherein the second active fin comprises a third side surface facing the second side surface of the first active fin and a fourth side surface opposing the third side surface of the second active fin;

a third active fin on the substrate, wherein the third active fin comprises a fifth side surface facing the fourth side surface of the second active fin and a sixth side surface opposing the fifth side surface of the third active fin;

an isolation region on the substrate and comprising a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer between the fourth side surface of the second active fin and the fifth side surface of the third active fin, and a fourth isolation layer on the sixth side surface of the third active fin;

a first source/drain that extends from a top surface of the first active fin and the second active fin;

a second source/drain that extends from a top surface of the third active fin;

a first contact on and in contact with the first source/drain; and

a second contact on and in contact with the second source/drain,

wherein the first source/drain comprises:

a first portion vertically overlapping the first isolation layer;

a second portion vertically overlapping the first active fin;

a third portion vertically overlapping the second isolation layer;

a fourth portion vertically overlapping the second active fin; and

a fifth portion vertically overlapping the third isolation layer,

wherein the second source/drain comprises:

a sixth portion vertically overlapping the third isolation layer;

a seventh portion vertically overlapping the third active fin; and

an eighth portion vertically overlapping the fourth isolation layer,

wherein a first distance between the fourth side surface of the second active fin and the fifth side surface of the third active fin is greater than a second distance between the second side surface of the first active fin and the third side surface of the second active fin,

wherein the first contact comprises a first contact portion vertically overlapping the first source/drain and a second contact portion not vertically overlapping the first source/drain,

wherein a lower end of the fifth portion of the first source/drain is at a lower level than a lower end of the third portion of the first source/drain, and

wherein a lower portion of the first isolation layer vertically overlapping the second contact portion of the first contact that does not vertically overlap the first source/drain is lower than a lower surface of the second isolation layer.