US 11,942,498 B2
Microlenses for semiconductor device with single-photon avalanche diode pixels
Marc Allen Sulfridge, Boise, ID (US); Byounghee Lee, Meridian, ID (US); and Ulrich Boettiger, Garden City, ID (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Feb. 22, 2022, as Appl. No. 17/651,916.
Application 17/651,916 is a continuation of application No. 16/402,429, filed on May 3, 2019, granted, now 11,289,524.
Claims priority of provisional application 62/817,954, filed on Mar. 13, 2019.
Prior Publication US 2022/0181373 A1, Jun. 9, 2022
Int. Cl. H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H01L 31/107 (2006.01); H04N 25/50 (2023.01); H04N 25/702 (2023.01); H04N 25/75 (2023.01)
CPC H01L 27/14627 (2013.01) [H01L 27/14685 (2013.01); H01L 31/107 (2013.01); H04N 25/50 (2023.01); H04N 25/702 (2023.01); H04N 25/75 (2023.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a plurality of single-photon avalanche diode pixels;
a plurality of first microlenses, wherein at least one of the first microlenses covers each of the plurality of single-photon avalanche diode pixels, each first microlens has a first surface, and the first microlenses are square toroidal microlenses; and
a plurality of second microlenses, wherein each second microlens fills a gap in the plurality of first microlenses, each second microlens has a second surface that is coplanar with the first surface, and the first microlenses and second microlenses together form a plurality of convex microlenses.