US 11,942,492 B2
Image sensing device
Jae Hyung Jang, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Aug. 13, 2021, as Appl. No. 17/402,334.
Claims priority of application No. 10-2021-0003960 (KR), filed on Jan. 12, 2021.
Prior Publication US 2022/0223639 A1, Jul. 14, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01)
CPC H01L 27/14614 (2013.01) [H01L 27/14616 (2013.01); H01L 27/14625 (2013.01); H01L 27/1463 (2013.01); H04N 25/75 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a semiconductor substrate;
a photoelectric conversion region supported by the semiconductor substrate and structured to generate charge carriers from incident light and capture the charge carriers using an electric potential difference caused by a demodulation control signal applied to the photoelectric conversion region; and
a circuit region supported by the substrate and disposed adjacent to the photoelectric conversion region, the circuit region including a plurality of pixel transistors that generate and output a pixel signal corresponding to the charge carriers captured by the photoelectric conversion region,
wherein the circuit region includes:
a first well region formed to have a first length in a first direction; and
a second well region formed below the first well region such that a lower end of the first well region is in contact with an upper end of the second well region, and formed to have a second length shorter than the first length in the first direction.