US 11,942,482 B2
Display device and manufacturing method thereof
Hyung Jun Kim, Seoul (KR); So Young Koo, Hwaseong-si (KR); Eok Su Kim, Seoul (KR); Yun Yong Nam, Hwaseong-si (KR); Jun Hyung Lim, Seoul (KR); and Kyung Jin Jeon, Incheon (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Aug. 10, 2021, as Appl. No. 17/398,566.
Claims priority of application No. 10-2020-0165906 (KR), filed on Dec. 1, 2020.
Prior Publication US 2022/0173128 A1, Jun. 2, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10K 59/12 (2023.01)
CPC H01L 27/1225 (2013.01) [H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10K 59/1201 (2023.02)] 20 Claims
OG exemplary drawing
 
10. A display device comprising:
a light blocking layer disposed on a substrate;
a first oxygen supply layer disposed on and contacting the light blocking layer;
a semiconductor layer disposed on the first oxygen supply layer;
a gate insulating layer disposed on the semiconductor layer;
a second oxygen supply layer disposed on the gate insulating layer;
a gate electrode disposed on the second oxygen supply layer; and
a light emitting diode electrically connected with the semiconductor layer, wherein
the semiconductor layer comprises an oxide semiconductor,
the first oxygen supply layer and the second oxygen supply layer comprise a metal oxide that includes at least one of indium, zinc, gallium, and tin, and
a thickness of the first oxygen supply layer and a thickness of the second oxygen supply layer are in a range of about 30% to about 50% of a thickness of the semiconductor layer.