US 11,942,445 B2
Semiconductor device with conductive pad
Chen-En Yen, Changhua County (TW); Chin-Wei Kang, Tainan (TW); Kai-Jun Zhan, Taoyuan (TW); Wen-Hsiung Lu, Tainan (TW); Cheng-Jen Lin, Kaohsiung (TW); Ming-Da Cheng, Taoyuan (TW); and Mirng-Ji Lii, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 23, 2021, as Appl. No. 17/409,138.
Application 17/409,138 is a division of application No. 16/868,909, filed on May 7, 2020, granted, now 11,101,233.
Prior Publication US 2021/0384152 A1, Dec. 9, 2021
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/11 (2013.01) [H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/81801 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate having a surface;
a conductive pad over a portion of the surface, wherein the conductive pad has a curved top surface, a width of the conductive pad increases toward the substrate, the substrate has a first portion and a second portion adjacent to the first portion, the first portion and the second portion have different thicknesses, and the conductive pad is over the first portion;
a device over the conductive pad; and
a solder layer between the device and the conductive pad, wherein the solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.