US 11,942,441 B2
Electrostatic discharge protection cell and antenna integrated with through silicon via
HoChe Yu, Hsinchu (TW); Fong-Yuan Chang, Hsinchu (TW); XinYong Wang, Hsinchu (TW); Chih-Liang Chen, Hsinchu (TW); and Tzu-Heng Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY, LIMITED, Shanghai (CN)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and TSMC CHINA COMPANY, LIMITED, Shanghai (CN)
Filed on Sep. 21, 2021, as Appl. No. 17/480,329.
Claims priority of application No. 202111005963.7 (CN), filed on Aug. 30, 2021.
Prior Publication US 2023/0061812 A1, Mar. 2, 2023
Int. Cl. H01L 23/60 (2006.01); H01L 21/765 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/58 (2006.01); H01L 27/02 (2006.01); H01Q 9/04 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 21/765 (2013.01); H01L 21/76885 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 27/0255 (2013.01); H01Q 9/0407 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising;
a through-silicon via (TSV) in a TSV zone in a substrate, wherein the TSV extends through the substrate;
an ESD cell proximal to a first end of the TSV and in contact with the TSV zone, the ESD cell comprising a set of diodes electrically connected in parallel to each other;
an antenna pad electrically connected to a second end of the TSV;
an antenna electrically connected to the antenna pad and extending in a first direction, wherein the first direction is parallel to a major axis of the TSV; and
a conductive pillar extending parallel to the TSV at a same side of the substrate as the antenna pad in the first direction, wherein a first end of the conductive pillar electrically connects to the antenna pad, and a second end of the conductive pillar electrically connects to the set of diodes of the ESD cell.