US 11,942,425 B2
Semiconductor structure having contact structure
Chih-Ying Tsai, New Taipei (TW); Jui-Seng Wang, New Taipei (TW); and Yi-Yi Chen, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Apr. 19, 2022, as Appl. No. 17/723,764.
Prior Publication US 2023/0335490 A1, Oct. 19, 2023
Int. Cl. H01L 23/528 (2006.01); G11C 5/06 (2006.01); H01L 27/108 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/528 (2013.01) [G11C 5/063 (2013.01); H01L 23/5283 (2013.01); H10B 12/0335 (2023.02); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/485 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor substrate;
a contact structure on the semiconductor substrate, the contact structure having a first side and a second side opposite to the first side;
a dielectric spacer adjacent to the contact structure and having a first concave surface; and
a first conductive element on the semiconductor substrate, wherein the first conductive element is partially surrounded by the first concave surface of the dielectric spacer;
wherein the dielectric spacer comprises:
a first dielectric layer at the first side of the contact structure;
a second dielectric layer on the first dielectric layer, wherein the second dielectric layer has a U-shape structure from a top view perspective; and
a third dielectric layer on the second dielectric layer, wherein the third dielectric layer has a U-shape structure from a top view perspective.