US 11,942,418 B2
Semiconductor structure and method for making the same
Po-Chuan Tsai, Hsinchu (TW); and Wei-Ken Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 23, 2021, as Appl. No. 17/383,690.
Prior Publication US 2023/0026034 A1, Jan. 26, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 24/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a combined feature including a passivation layer, a contact via extending through the passivation layer, a conductive pad disposed on and connected to the contact via, and a dielectric layer disposed on the passivation layer and the conductive pad;
a bump feature disposed on the combined feature and connected to the conductive pad;
a protection layer disposed on the dielectric layer and surrounding a lower portion of the bump feature; and
a fluorine-containing polymeric layer disposed on the protection layer, surrounding at least a part of the lower portion of the bump feature, and separated from the conductive pad by the protection layer,
wherein the protection layer includes a first sub-layer that is in direct contact with the conductive pad, and a second sub-layer that is in direct contact with the fluorine-containing polymeric layer, one of the first sub-layer and the second sub-layer being made of an oxide material, the other one of the first sub-layer and the second sub-layer being made of a nitride material.