US 11,942,417 B2
Sensor package and method
Yung-Chi Chu, Kaohsiung (TW); Sih-Hao Liao, New Taipei (TW); Po-Han Wang, Hsinchu (TW); Yu-Hsiang Hu, Hsinchu (TW); and Hung-Jui Kuo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 4, 2020, as Appl. No. 16/865,806.
Prior Publication US 2021/0343638 A1, Nov. 4, 2021
Int. Cl. H01L 23/522 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 2224/04105 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a sensor die having a sensing region at a top surface of the sensor die;
an encapsulant at least laterally encapsulating the sensor die, wherein the encapsulant physically contacts a sidewall surface of the sensor die;
a conductive via extending through the encapsulant; and
a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure comprises a first dielectric layer extending over the encapsulant and the top surface of the sensor die, wherein a sidewall of the first dielectric layer forms a sidewall of the opening, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer, wherein a top surface of the first dielectric layer adjacent the sidewall of the first dielectric layer is free of the second dielectric layer.