CPC H01L 23/5223 (2013.01) [H01L 21/707 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 28/24 (2013.01); H01L 28/40 (2013.01)] | 19 Claims |
1. A device comprising:
a substrate;
an interlevel dielectric arranged over the substrate, the interlevel dielectric comprising: a first interlevel dielectric layer in an interconnect level i, the first interlevel dielectric layer having a first interconnect and a second interconnect therein;
a nitride block insulator arranged over the first interlevel dielectric layer and over the first interconnect and the second interconnect;
an opening arranged in the nitride block insulator, the opening extending through the nitride block insulator to expose a surface of the first interconnect in the first interlevel dielectric layer;
a contact plug arranged in the opening of the nitride block insulator, wherein the contact plug at least lines the opening and partially fills the opening, wherein the contact plug lines a bottom and sidewalls of the opening in the nitride block insulator without completely filling the opening, thereby preventing out-diffusion of conductive material from the first interconnect; and
a first film of a passive component arranged over the nitride block insulator and over the contact plug, wherein the first film conforms to a topography of the nitride block insulator and the contact plug by directly lining a bottom and sidewalls of the contact plug in the opening and directly contacting the nitride block insulator beyond the opening.
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