CPC H01L 23/49822 (2013.01) [H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16235 (2013.01); H01L 2924/014 (2013.01)] | 20 Claims |
1. A method for manufacturing a semiconductor package, comprising:
providing an interconnect bridge embedded within a build-up material formed on a surface of a sacrificial core, the interconnect bridge comprising an interconnect first side with a conductive pad and an interconnect second side opposite the interconnect first side, such that a distance between the interconnect first side and the surface is less than a distance between the interconnect second side and the surface;
forming a first via in the build-up material, wherein the first via has a first end that is narrower than a second end of the first via, and the first end is closer to the surface than the second end is to the surface;
providing, prior to removal of the sacrificial core, a temporary carrier on a side of the semiconductor package opposite to the sacrificial core;
removing the sacrificial core to expose the interconnect first side;
providing additional build-up material at the interconnect first side; and
forming a second via in the build-up material disposed at the interconnect first side, wherein the second via has a first end that is narrower than a second end, wherein the first end of the first via and the first end of the second via face opposite directions.
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