US 11,942,398 B2
Semiconductor device having at least one via including concave portions on sidewall
Ting-Li Yang, Tainan (TW); Wen-Hsiung Lu, Tainan (TW); Jhao-Yi Wang, Tainan (TW); Fu Wei Liu, Hsinchu (TW); and Chin-Yu Ku, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/461,972.
Prior Publication US 2023/0063096 A1, Mar. 2, 2023
Int. Cl. H01L 21/76 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/486 (2013.01); H01L 21/76879 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate, comprising an electronic circuitry;
at least one via, passing through the substrate, wherein the at least one via comprises a plurality of concave portions on a sidewall thereof;
a liner layer, filling in the plurality of concave portions of the at least one via; and
a conductive layer, disposed on the sidewall of the at least one via, covering the liner layer, and extending onto a surface of the substrate, wherein a thickness of the conductive layer on the sidewall of the at least one via is varied,
wherein the at least one via has a lower opening and an upper opening wider than the lower opening, and
wherein the electronic circuitry is disposed aside the upper opening of the at least one via.