US 11,942,378 B2
Tunnel polarization junction III-N transistors
Han Wui Then, Portland, OR (US); Marko Radosavljevic, Portland, OR (US); and Sansaptak Dasgupta, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 18, 2022, as Appl. No. 17/675,961.
Application 17/675,961 is a continuation of application No. 16/643,447, granted, now 11,295,992, previously published as PCT/US2017/054373, filed on Sep. 29, 2017.
Prior Publication US 2022/0172996 A1, Jun. 2, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/778 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/04 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01)
CPC H01L 21/8252 (2013.01) [H01L 27/0605 (2013.01); H01L 29/045 (2013.01); H01L 29/267 (2013.01); H01L 29/66462 (2013.01); H01L 29/73 (2013.01); H01L 29/778 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transistor structure, comprising:
a first crystalline material layer comprising group III atoms and nitrogen;
a second crystalline material layer comprising group III atoms and nitrogen;
a layer other than a III-N material between the first and second crystalline material layers, wherein the first crystalline material layer comprises a first crystal orientation and the second crystalline material layer comprises a second crystal orientation inverted with respect to the first crystal orientation; and
a source, a drain, and a gate coupled to the first crystalline material layer.