US 11,942,373 B2
Fin isolation structure for FinFET and method of forming the same
Chu-An Lee, Hsinchu (TW); Chen-Hao Wu, Hsinchu (TW); Peng-Chung Jangjian, Hsinchu (TW); Chun-Wen Hsiao, Hsinchu (TW); Teng-Chun Tsai, Hsinchu (TW); and Huang-Lin Chao, Hillsboro, OR (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 10, 2023, as Appl. No. 18/315,000.
Application 18/315,000 is a continuation of application No. 17/245,768, filed on Apr. 30, 2021, granted, now 11,688,644.
Application 17/245,768 is a continuation of application No. 16/927,145, filed on Jul. 13, 2020, granted, now 10,998,239, issued on May 4, 2021.
Application 16/927,145 is a continuation of application No. 16/277,326, filed on Feb. 15, 2019, granted, now 10,714,395, issued on Jul. 14, 2020.
Claims priority of provisional application 62/732,657, filed on Sep. 18, 2018.
Prior Publication US 2023/0274982 A1, Aug. 31, 2023
Int. Cl. H01L 21/82 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 27/08 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/3105 (2006.01)
CPC H01L 21/823481 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 21/31053 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first fin, a second fin and a third fin between the first fin and the second fin that protrude from a substrate, wherein the third fin is spaced apart from the first fin by a first width and spaced apart from the second fin by a second width less than the first width;
a first insulating structure formed over the substrate, comprising:
a first insulating layer formed between the first fin and the third fin;
a capping structure covering a top surface of the first insulating layer;
a first insulating liner covering sidewall surfaces of the first insulating layer and the capping structure and a bottom surface of the first insulating layer; and
a second insulating liner formed between the first insulating liner and the first fin and between the first insulating liner and the third fin; and
a second insulating structure formed over the substrate, comprising:
a second insulating layer formed between the second fin and the third fin; and
a third insulating liner formed between the second insulating layer and the second fin and between the second insulating layer and the third fin.