US 11,942,367 B2
Semiconductor device and method of manufacture
Chan Syun David Yang, Hsinchu (TW); Li-Te Lin, Hsinchu (TW); and Chun-Jui Huang, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 7, 2020, as Appl. No. 17/113,836.
Application 17/113,836 is a continuation of application No. 15/898,719, filed on Feb. 19, 2018, granted, now 10,861,745.
Claims priority of provisional application 62/593,054, filed on Nov. 30, 2017.
Prior Publication US 2021/0111071 A1, Apr. 15, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/76897 (2013.01) [H01L 23/535 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/165 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
gate spacers over a semiconductor fin;
a first gate stack adjacent to the gate spacers;
a second gate stack over the semiconductor fin;
a first sacrificial material over the first gate stack and the second gate stack, wherein the first sacrificial material comprises zirconium oxide;
a first conductive material and a second sacrificial material in a region between the first gate stack and the second gate stack and between the first sacrificial material over the first gate stack and the first sacrificial material over the second gate stack, wherein the second sacrificial material is different from the first sacrificial material;
a gate contact extending through the first sacrificial material;
a source/drain contact extending through the second sacrificial material; and
a helmet material over the first sacrificial material, wherein the helmet material has a chlorine-based dry etch selectivity to the first sacrificial material of greater than about 12.