US 11,942,353 B2
Adhesive tape for semiconductor processing and method for producing semiconductor device
Kazuto Aizawa, Tokyo (JP); and Jun Maeda, Tokyo (JP)
Assigned to Lintec Corporation, Tokyo (JP)
Appl. No. 17/254,893
Filed by Lintec Corporation, Tokyo (JP)
PCT Filed Jun. 4, 2019, PCT No. PCT/JP2019/022165
§ 371(c)(1), (2) Date Dec. 22, 2020,
PCT Pub. No. WO2020/003920, PCT Pub. Date Jan. 2, 2020.
Claims priority of application No. 2018-121129 (JP), filed on Jun. 26, 2018.
Prior Publication US 2021/0210372 A1, Jul. 8, 2021
Int. Cl. H01L 21/683 (2006.01); B32B 27/08 (2006.01); B32B 27/30 (2006.01); B32B 27/36 (2006.01); C09J 7/29 (2018.01); C09J 7/38 (2018.01); H01L 21/78 (2006.01)
CPC H01L 21/6836 (2013.01) [B32B 27/08 (2013.01); B32B 27/308 (2013.01); B32B 27/36 (2013.01); C09J 7/29 (2018.01); C09J 7/385 (2018.01); H01L 21/78 (2013.01); B32B 2405/00 (2013.01); C09J 2433/006 (2013.01); C09J 2467/006 (2013.01); C09J 2475/006 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor processing adhesive tape, comprising:
a base, a buffer layer provided at least on one surface of the base, and an adhesive layer provided on another surface of the base, wherein:
a Young's modulus at 23° C. of the buffer layer is 10 to 63 MPa and a breaking energy at 23° C. of the buffer layer is 1 to 9 MJ/m3, and
a Young's modulus at 23° C. of the base is larger than the Young's modulus at 23° C. of the buffer layer.