CPC H01L 21/02686 (2013.01) [B23K 26/0006 (2013.01); B23K 26/0622 (2015.10); B23K 26/082 (2015.10); B23K 26/0861 (2013.01); B23K 26/354 (2015.10); H01L 21/02532 (2013.01); H01L 21/02691 (2013.01); H01L 27/1274 (2013.01); H01L 29/6675 (2013.01); H01L 29/78672 (2013.01); B23K 26/0626 (2013.01); B23K 26/073 (2013.01); B23K 2101/40 (2018.08); B23K 2103/172 (2018.08); B23K 2103/56 (2018.08); H01L 21/02683 (2013.01)] | 29 Claims |
1. A method for crystallizing a thin film, the method comprising:
providing a thin film;
providing a laser beam producing a spot on the thin film;
continually translating the laser beam in a first direction at a first rate while irradiating overlapping regions of the thin film to generate a molten zone by applying a laser pulse in each region, each laser pulse applied before a previously irradiated region has been fully solidified;
propagating the molten zone along the first direction by initiating melting in the leading edge of the overlap irradiated region; and
allowing the molten zone to cool and solidify and form the crystalline region in the trailing edge of the region,
wherein the first rate is faster than a rate of solidification of the molten zone.
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