CPC G11C 5/14 (2013.01) [G11C 16/30 (2013.01); H02M 3/1582 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] | 19 Claims |
1. A semiconductor memory device comprising
a plastic package including:
an inductor;
a first memory chip including a booster circuit that boosts a voltage from a first voltage to a second voltage using the inductor; and
a second memory chip having a terminal supplied with the second voltage from the first memory chip, wherein
booster circuit includes:
a switching element having one end connected to the inductor and another end having a ground potential;
a rectifier circuit that is connected to the inductor and rectifies an output voltage of the switching element; and
a control circuit that performs switching control of turning on or off the switching element according to an output voltage of the rectifier circuit, and
the plastic package includes a capacitor having one end connected to an output node of the rectifier circuit and another end having a potential of the ground potential,
the first memory chip includes a first terminal connected to one end of the inductor and a second terminal connected to the output node and the one end of the capacitor, and
each of the first memory chip and the second memory chip includes a third terminal connected to the one end of the capacitor, and a fourth terminal supplied with a third voltage lower than the second voltage, and
the plastic package further includes a first pin supplied with the first voltage and connected to another end of the inductor, and a second pin supplied with the third voltage and connected to the second terminal.
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